Low-energy neutral/ion backscattering at As/Si(001)

Journal Article · Sun May 01 04:00:00 EDT 1988 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.575180· OSTI ID:5258338

Niehus, H; Mann, K; Eldridge, B N; Yu, M L

The surface crystallography of arsenic covered Si(001) has been analyzed by low-energy neutral impact collision ion scattering spectroscopy (NICISS). The 170/sup 0/ backscattered He neutrals and ions have been detected by a time-of-flight technique. The measured data show two well-time-resolved lines for He scattered at Si and As atoms, respectively. Hence NICISS angular pattern for Si and As could be measured simultaneously. Adsorption of arsenic lifts the original 1 x 2 reconstruction of the Si(001) substrate and forms itself a 1 x 2 As overlayer. The As overlayer is well described by a dimer arrangement with an interatomic distance of 2.55 A of the As dimers. From the ion scattering experiment considerable thermal vibrations of the As atoms in the overlayer have been concluded. Best agreement with Monte Carlo trajectory calculations is obtained for a Debye temperature of 120 K.

• Research Organization: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
• OSTI ID: 5258338
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 6:3; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
ARSENIC
CHARGED PARTICLES
CHEMICAL ANALYSIS
COLLISIONS
DIMERS
ELEMENTS
HELIUM IONS
ION COLLISIONS
ION SCATTERING ANALYSIS
ION SPECTROSCOPY
IONS
LOW TEMPERATURE
MONTE CARLO METHOD
NONDESTRUCTIVE ANALYSIS
SEMIMETALS
SILICON
SORPTION
SORPTIVE PROPERTIES
SPECTROSCOPY
SURFACE PROPERTIES
SURFACES