Microcrystalline silicon growth for heterojunction solar cells. First quarterly report, November 1, 1982-March 31, 1983

Technical Report · Sat Jan 01 04:00:00 EST 1983

DOI:https://doi.org/10.2172/5249498· OSTI ID:5249498

Iles, P. A.; Leung, D. C.; Fang, P. H.

A total of sixteen runs of e-beam vacuum deposition of p-type microcrystalline Si (m-Si) films were attempted on n-type or p-n junction single crystalline Si (C-Si) substrates. The m-Si film thickness varied from .15 to .7 ..mu..m and metal contacts were deposited after plasma hydrogenation. The p-m-Si on n-c-Si structure had a Voc of up to 490 mV while no Voc improvements were observed in the p-m-Si on p-n C-Si structure against p-n controls. Both CFF and Jsc were lower than control. Possible problem areas were interfaced between m-Si and C-si and the back contacts due to lack of sintering for fear of dehydrogenation. Some methods of improvement in these areas are outlined.

• Research Organization: Applied Solar Energy Corp., City of Industry, CA (USA)
• DOE Contract Number: NAS-7-100-956369
• OSTI ID: 5249498
• Report Number(s): DOE/JPL/956369-83/01; ON: DE83015270
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ABSORPTION SPECTRA
CRYSTAL DOPING
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY BEAM DEPOSITION
EQUIPMENT
FABRICATION
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRA
SURFACE COATING