Carrier-induced refractive-index change in quantum-well lasers

Journal Article · Thu Mar 31 23:00:00 EST 1988 · Opt. Lett.; (United States)

DOI:https://doi.org/10.1364/OL.13.000303· OSTI ID:5248219

Chow, W W; Depatie, D

We investigated the loaded gain and the carrier-induced refractive-index change in quantum-well lasers. A quantum-well laser is found typically to have a higher gain and a smaller refractive-index change than a conventional diode laser. We also found that the gain and the refractive-index change for these two types of semiconductor lasers saturate similarly, with the refractive index being a much weaker function of laser intensity.

• Research Organization: Hughes Aircraft Company, 1600 Randolph Court, S.E., Albuquerque, New Mexico 87106
• OSTI ID: 5248219
• Journal Information: Opt. Lett.; (United States), Journal Name: Opt. Lett.; (United States) Vol. 13:4; ISSN OPLED
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
CARRIER DENSITY
CHARGE CARRIERS
GAIN
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS