Carrier induced refractive index change in AlGaAs quantum well lasers
Measurements of the carrier induced refractive index change in AlGaAs quantum well lasers are presented which show that the guided mode in single quantum well lasers exhibits a small (..delta..n/..delta..Napprox.-3 x 10/sup -22/ cm/sup 3/) carrier induced change in refractive index. This is more than an order of magnitude smaller than the corresponding value for conventional active layer lasers. The measured ..delta..n/sub A//..delta..N approx.-7 x 10/sup -21/ cm/sup 3/ in the active layers of AlGaAs multiquantum well structures. The measured index changes of the guided mode at threshold (..delta..n/sub th/) are -5.6 x 10/sup -3/ and -7.6 x 10/sup -3/ for the single quantum well and multiquantum well lasers, respectively. This should be compared with a value of approx.1.2 x 10/sup -2/ for conventional active layer lasers. These results suggest that single frequency sources fabricated using real index guided single quantum well active layers may have improved frequency stability under direct current modulation.
- Research Organization:
- AT and T Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6459733
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:8; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CURRENTS
ELECTRIC CURRENTS
ELECTRO-OPTICAL EFFECTS
FABRICATION
FREQUENCY SELECTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LAYERS
MODULATION
OPTICAL MODES
OPTICAL PROPERTIES
OSCILLATION MODES
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY