Injected-carrier induced refractive-index change in semiconductor lasers

Journal Article · Wed Jul 01 00:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92550· OSTI ID:6426972

Olsson, A; Tang, C L

A red-shift in the diode modes with increasing optical feedback is observed in external-cavity Al/sub x/Ga/sub 1-x/As injection lasers. This shift is due to a change in the refractive index in the active region resulting from a reduction in the population-inversion induced by the optical feedback. This leads to a new determination of the carrier dependence of the refractive index at the laser wavelength in the active region of semiconductor lasers independent of current-induced thermal effects.

• Research Organization: Cornell University, Ithaca, New York 14853
• OSTI ID: 6426972
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
ELECTRO-OPTICAL EFFECTS
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
OPTICAL PROPERTIES
OSCILLATION MODES
PHYSICAL PROPERTIES
PNICTIDES
POPULATION INVERSION
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE EFFECTS
WAVELENGTHS