Preliminary results from a novel CdZnTe linear pad detector array x-ray imaging system
- NOVA R and D, Inc., Riverside, CA (United States)
- eV Products, Saxonburg, PA (United States)
- ARDEC, Picatinny Arsenal, NJ (United States)
The excellent energy-resolution and short charge collection time, especially the possibility of room temperature operation, make CdZnTe semiconductor detectors an excellent candidate for x-ray imaging and spectroscopic application in nuclear physics. Because of these characteristics, CdZnTe pad detectors with a novel geometry and approximately 1 mm{sup 2} pad area have been developed. These pad type linear arrays are new and important for many scanning type applications using a wide energy range from about 10 to 300 keV energies. A prototype x-ray imaging system has been developed consisting of a state-of-the-art pad type linear array of CdZnTe detectors manufactured by eV Products and low noise readout electronics developed by NOVA R and D, Inc. A series of measurements on the temperature dependence of the performance of CdZnTe linear pad detector arrays has been performed at NOVA R and D, Inc. The changes in dark (leakage) current against temperature have been studied. High resolution x-ray spectra has been obtained using {sup 57}Co source at different temperatures. A low noise front-end electronics ASIC chip for reading out the detector array was developed that can achieve fast data acquisition with dual energy imaging capability. Several prototype CdZnTe pad detector arrays are placed next to each other to form an approximately 30 cm long linear array. This array is used to make preliminary dual energy scanned images of complex objects using a 90 kV x-ray generator. Some of the images will be presented. The results show that the system is excellent for applications in industrial and medical imaging.
- OSTI ID:
- 524767
- Report Number(s):
- CONF-960848--; ISBN 0-8194-2247-9
- Country of Publication:
- United States
- Language:
- English
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