XA readout chip characteristics and CdZnTe spectral measurements
- NASA/Goddard Space Flight Center, Greenbelt, MD (United States); and others
The authors report on the performance of a CdZnTe (CZT) array readout by an XA (X-ray imaging chip produced at the AMS foundry) application specific readout chip (ASIC). The array was designed and fabricated at NASA/Goddard Space Flight Center (GSFC) as a prototype for the Burst Arc-Second Imaging and Spectroscopy gamma-ray instrument. The XA ASIC was obtained from Integrated Detector and Electronics (IDE), in Norway. Performance characteristics and spectral data for {sup 241}Am are presented both at room temperature and at {minus}20 C. The measured noise ({sigma}) was 2.5 keV at 60 keV at room temperature. This paper represents a progress report on work with the XA ASIC and CZT detectors. Work is continuing and in particular, larger arrays are planned for future NASA missions.
- OSTI ID:
- 328405
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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