Preliminary results obtained from novel CdZnTe pad detectors

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.507076· OSTI ID:277695

Tuemer, T O; Joyce, D C; Yin, S ^[1]; Willson, P D ^[2]; Parnham, K B; Glick, B ^[3]

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1. NOVA R and D, Inc., Riverside, CA (United States)
2. Army ARDEC, Picatinny Arsenal, NJ (United States)
3. eV Products, Saxonburg, PA (United States)

CdZnTe pad detectors with a novel geometry and approximately 1 mm{sup 2} pad sizes are being developed. These detectors have been specially designed for high energy resolution up to 300 keV energies. The contacts are produced through a unique technique developed by eV Products to achieve high reliability low resistance coupling to the substrate. A ceramic carrier is developed for low capacitance coupling of the detectors to NOVA`s FEENA chip. The detectors have been tested using the ultra low noise single and 3-channel amplifiers developed by eV Products. The CdZnTe detectors are tested for dark current. The charge energy resolutions and collection times are also measured using natural radiation sources. The measured detector parameters and the test results are showing that linear pad arrays can have good uniformity and excellent application potential for imaging x-rays and gamma-rays.

• OSTI ID: 277695
• Report Number(s): CONF-951073--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CADMIUM TELLURIDES
DESIGN
EXPERIMENTAL DATA
GAMMA DETECTION
PERFORMANCE TESTING
SEMICONDUCTOR DETECTORS
X-RAY DETECTION
ZINC TELLURIDES