Growth and characterization of thin films of thallium(III) oxide by organometallic chemical vapor deposition

Journal Article · · Chemistry of Materials; (United States)

DOI:https://doi.org/10.1021/cm00013a019· OSTI ID:5237947

Berry, A D; Holm, R T; Mowery, R L; Turner, N H; Fatemi, M ^[1]

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1. Naval Research Lab., Washington, DC (USA)

Films containing thallium(III) oxide were grown by organometallic chemical vapor deposition in an oxygen-rich atmosphere on MgO, Al{sub 2}O{sub 3}, and Si substrates. Three organothallium precursors were used: thallium acetylacetonate, dimethylthallium acetylacetonate, and cyclopentadienylthallium. Films were characterized by using X-ray diffraction techniques and X-ray photoelectron, Auger electron, and infrared spectroscopies. The results indicate the presence of Tl{sub 2}O{sub 3} as the major component with possible smaller amounts of Tl{sub 2}CO{sub 3}. Deposition on Si resulted in the formation of a silicate from interaction between the film and the substrate.

• OSTI ID: 5237947
• Journal Information: Chemistry of Materials; (United States), Journal Name: Chemistry of Materials; (United States) Vol. 3:1; ISSN CMATE; ISSN 0897-4756
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
AUGER ELECTRON SPECTROSCOPY
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
ELECTRON SPECTROSCOPY
FILMS
INFRARED SPECTRA
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
SCATTERING
SPECTRA
SPECTROSCOPY
SURFACE COATING
THALLIUM COMPOUNDS
THALLIUM OXIDES
THIN FILMS
X-RAY DIFFRACTION