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Reactively magnetron sputtered Hf-N films. I. Composition and structure

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.335812· OSTI ID:5235350
Thin films of Hf-N, covering the entire composition range from pure Hf to overstoichiometric HfN, have been prepared by reactive magnetron sputtering. The structure of the films has been investigated by x-ray diffraction, transmission electron microscopy, and scanning electron microscopy and the composition has been determined using Auger electron spectroscopy. A solubility of roughly-equal30 at. % nitrogen is found in the ..cap alpha..-Hf region. Above 30 at. % N a multiphase structure consisting of ..cap alpha..-Hf, HfN, Hf/sub 3/N/sub 2/, and/or Hf/sub 4/N/sub 3/ is found, which is not in agreement with the equilibrium structure. In the mononitride region a lattice parameter of roughly-equal4.53 A is observed. This value is slightly higher than reported bulk values due to intrinsic stress in the films. Increasing the nitrogen content above 50 at. % causes a distortion of the cubic symmetry of the lattice. This is first observed as an increase in the (111) interplanar spacing while other spacings decrease. Also a splitting of some reflections occurs at higher nitrogen contents. This phase transition is suggested to be due to a successive change from a cubic to a rhombohedral structure.
Research Organization:
Thin Film Group, Department of Physics and Measurement Technology, Linkoeping University, S-581 83 Linkoeping, Sweden
OSTI ID:
5235350
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Journal Issue: 8 Vol. 58:8; ISSN JAPIA
Country of Publication:
United States
Language:
English

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