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Study of nitrogen-rich titanium and zirconium nitride films

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.574950· OSTI ID:6511844
Thin titanium nitride (TiN) and zirconium nitride (ZrN) films containing excess nitrogen up to 59 and 63 at. % N, respectively, were deposited on austenitic stainless-steel substrates by reactive triode ion plating at about 823 K. The film structure and surface chemistry were studied using x-ray diffraction, scanning Auger spectroscopy, and electron energy-loss spectroscopy (EELS). In TiN films only the face-centered-cubic mononitride phase was detected. The lattice parameter of the stoichiometric TiN film was larger than the corresponding bulk value and it increased with increasing nitrogen content. The lattice parameter of overstoichiometric ZrN films showed abnormal behavior when calculated from different diffracting planes. This behavior together with the EELS and other measurements indicate that a dielectric Zr/sub 3/N/sub 4/ phase was formed at overstoichiometric compositions.
Research Organization:
Neste Oy, Technology Centre, SF-06850 Kulloo, Finland, and Laboratory of Physical Metallurgy, Helsinki University of Technology, Espoo, Finland
OSTI ID:
6511844
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 5:4; ISSN JVTAD
Country of Publication:
United States
Language:
English