Reactively magnetron sputtered Hf-N films. II. Hardness and electrical resistivity

Journal Article · Tue Oct 15 04:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335813· OSTI ID:5235235

Johansson, B O; Sundgren, J; Helmersson, U

The microhardness and electrical resistivity have been measured on thin Hf-N films, covering the entire composition range from pure Hf to overstoichiometric HfN. Influence of substrate bias on the properties of stoichiometric HfN films has also been studied. All films have been prepared by high-rate reactive magnetron sputtering at a substrate temperature of 400 /sup 0/C. Both hardness and resistivity increase as nitrogen is added to the ..cap alpha..-Hf phase. For the cubic HfN phase the hardness has a maximum, roughly-equal3500 HV, and the resistivity a minimum, 225 ..mu cap omega.. cm, at a composition close to stoichiometry. However, both values are considerably higher than those reported for bulk samples. This is explained in terms of nonequilibrium growth conditions, giving rise to high densities of dislocations and interstitially incorporated nitrogen atoms. For films with a nitrogen content above 50 at. % a very high-resistivity value is found, 2.0 ..cap omega.. cm at maximum. By applying a low substrate bias voltage the resistivity of stoichiometric HfN was decreased with a factor of about 3, and simultaneously a grain growth and/or reduced defect concentration was observed. At higher bias voltages the resistivity increases and the grain sizes decrease.

• Research Organization: Thin Film Group, Department of Physics and Measurement Technology, Linkoeping University, S-581 83 Linkoeping, Sweden
• OSTI ID: 5235235
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
CHEMICAL COMPOSITION
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
GRAIN GROWTH
GRAIN SIZE
HAFNIUM COMPOUNDS
HAFNIUM NITRIDES
HARDNESS
MAGNETRONS
MECHANICAL PROPERTIES
MICROHARDNESS
MICROSTRUCTURE
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SIZE
SPUTTERING
STOICHIOMETRY
TRANSITION ELEMENT COMPOUNDS