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Scanning tunneling microscopy study of the cleaved InSb(110) surface

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
DOI:https://doi.org/10.1116/1.585542· OSTI ID:5228502
; ;  [1]
  1. Arizona State Univ., Tempe, AZ (United States)
This paper describes a clean InSb(110) imaged in ultrahigh vacuum with scanning tunneling microscopy. A 1x1 surface structure was observed. A super-periodicity consistent with a c(4{times}6) reconstruction was also observed on some regions of some cleaved surfaces, and appears to be cleavage dependent. The InSb (110) surface can easily be altered by the tunneling process to produce nanoscopic dots on the surface as small as 9 {angstrom} radius.
OSTI ID:
5228502
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
Country of Publication:
United States
Language:
English

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