Structure of the reduced TiO sub 2 (110) surface determined by scanning tunneling microscopy

Journal Article · Fri Nov 30 04:00:00 EST 1990 · Science (Washington, D.C.); (USA)

DOI:https://doi.org/10.1126/science.250.4985.1239· OSTI ID:5942500

Rohrer, G S ^[1]; Henrich, V E ^[2]; Bonnell, D A ^[3]

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1. Carnegie Mellon University, Pittsburgh, PA (USA)
2. Yale Univ., New Haven, CT (USA)
3. Univ. of Pennsylvania, Philadelphia (USA)

The scanning tunneling microscope has been used to image a reduced TiO{sub 2}(110) surface in ultrahigh vacuum. Structural units with periodicities ranging from 21 to 3.4 angstroms have been clearly imaged, demonstrating that atomic resolution imaging of an ionic, wide band gap (3.2 electron volts) semiconductor is possible. The observed surface structures can be explained by a model involving ordered arrangements of two-dimensional defects known as crystallographic shear planes and indicate that the topography of nonstoichiometric oxide surfaces can be complex. 9 refs., 3 figs.

• OSTI ID: 5942500
• Journal Information: Science (Washington, D.C.); (USA), Journal Name: Science (Washington, D.C.); (USA) Vol. 250:4985; ISSN SCIEA; ISSN 0036-8075
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
CATALYTIC EFFECTS
CHALCOGENIDES
DATA
ELECTRON MICROSCOPY
EXPERIMENTAL DATA
INFORMATION
MATERIALS
MICROSCOPY
MOLECULAR STRUCTURE
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS