A low-power high-gain transresistance BiCMOS pulse amplifier for capacitive detector readout
- Free Univ. of Brussels (Belgium)
A low-power, high-gain amplifier for detector readout is discussed. The amplifier is balanced, fully differential in circuit topology, and symmetrical in layout, making it radiation tolerant and relatively insensitive to varying magnetic fields in the large detector. To keep the core amplifier stable, a low-power super-low gain-bandwidth (SL-GBW) amplifier with a small area is used and also discussed. The SL-GBW amplifier has a transition frequency f{sub T} of 38 kHz (including the gain stage, A), a power consumption of 150 nW, a phase margin (PM) of {approx}70{degree}, an area of 300 x 36 {micro}m{sup 2}, and a minimum current per transistor of 7 nA, which is far above the leakage current after irradiation. The complete circuit was implemented in the radiation hard SOI-SIMOX BiCMOS-PJFET technology of DMILL.
- OSTI ID:
- 522420
- Journal Information:
- IEEE Journal of Solid-State Circuits, Journal Name: IEEE Journal of Solid-State Circuits Journal Issue: 8 Vol. 32; ISSN IJSCBC; ISSN 0018-9200
- Country of Publication:
- United States
- Language:
- English
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