Measurement of the parameters of MIS structures with compensation of the effect of the capacitance of the dielectric

Journal Article · Mon Nov 30 23:00:00 EST 1987 · Instrum. Exp. Tech. (Engl. Transl.); (United States)

OSTI ID:5212995

Chaikovskii, V M

A scheme for measuring the parameters of an MIS structure excited by a low-amplitude impulsive signal is described. The measurements are performed under conditions of compensation of the capacitance of the dielectric. The scheme enables measurement of the capacitance of a semiconductor in the range 2-2000 pF with the capacitance of the dielectric varying from 5 to 500 pF and a surface state recharging time of the constant states varying from 30 to 300 ..mu..sec with a reduced error of +/-3%.

• Research Organization: Penza Polytechnic Institute (USSR)
• OSTI ID: 5212995
• Journal Information: Instrum. Exp. Tech. (Engl. Transl.); (United States), Journal Name: Instrum. Exp. Tech. (Engl. Transl.); (United States) Vol. 30:3; ISSN INETA
• Country of Publication: United States
• Language: English

Related Subjects

440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ACCURACY
CAPACITANCE
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC MEASURING INSTRUMENTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
EQUIPMENT
EQUIVALENT CIRCUITS
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MEASURING INSTRUMENTS
PERFORMANCE
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS