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Nitrogen implantation for molecular beam deposited CuInSe sub 2 thin films

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.106239· OSTI ID:5212475
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  1. Central Research Laboratories, Matsushita Electric Industrial Corporation, Ltd., Moriguchi, Osaka 570 (Japan)

We have implanted N{sup +} ions at an accelerating voltage of 10 kV and a dose of 5{times}10{sup 17} ions cm{sup {minus}2} in molecular beam deposited stoichiometric CuInSe{sub 2} thin films at various substrate temperatures (380, 515, 600, and 720 K). The conduction type of the films changed from {ital n} to {ital p} type when the substrate temperature was below 515 K during implantation. The conduction type was {ital n} type when the film temperature during implantation was above 600 K. The resistivity measured at 300 K was 1.07{times}10{sup 4}, 0.417, 0.653, 160, and 121 {Omega} cm for the films before implantation, implanted at 380, 515, 600, and 720 K, respectively. Both the conduction type and the resistivity of the films could be changed by N{sup +} doping. Fabrication of homojunction diodes may be achieved in {ital n}-type CuInSe{sub 2} films by using the low energy nitrogen ion implantation.

OSTI ID:
5212475
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:14; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English