Nitrogen implantation for molecular beam deposited CuInSe sub 2 thin films
- Central Research Laboratories, Matsushita Electric Industrial Corporation, Ltd., Moriguchi, Osaka 570 (Japan)
We have implanted N{sup +} ions at an accelerating voltage of 10 kV and a dose of 5{times}10{sup 17} ions cm{sup {minus}2} in molecular beam deposited stoichiometric CuInSe{sub 2} thin films at various substrate temperatures (380, 515, 600, and 720 K). The conduction type of the films changed from {ital n} to {ital p} type when the substrate temperature was below 515 K during implantation. The conduction type was {ital n} type when the film temperature during implantation was above 600 K. The resistivity measured at 300 K was 1.07{times}10{sup 4}, 0.417, 0.653, 160, and 121 {Omega} cm for the films before implantation, implanted at 380, 515, 600, and 720 K, respectively. Both the conduction type and the resistivity of the films could be changed by N{sup +} doping. Fabrication of homojunction diodes may be achieved in {ital n}-type CuInSe{sub 2} films by using the low energy nitrogen ion implantation.
- OSTI ID:
- 5212475
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:14; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
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CHALCOGENIDES
CHARGED PARTICLES
COPPER COMPOUNDS
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
EQUIPMENT
INDIUM COMPOUNDS
INDIUM SELENIDES
ION IMPLANTATION
IONS
MOLECULAR BEAM EPITAXY
NITROGEN IONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS