Minimizing sulfur contamination and rinse water volume required following a sulfuric acid/hydrogen peroxide clean by performing a chemically basic rinse

Conference · Fri Aug 01 00:00:00 EDT 1997

OSTI ID:519142

Clews, P J; Nelson, G C; Resnick, P J; Matlock, C A; Adkins, C L.J.

Sulfuric acid hydrogen peroxide mixtures (SPM) are commonly used in the semiconductor industry to remove organic contaminants from wafer surfaces. This viscous solution is very difficult to rinse off wafer surfaces. Various rinsing conditions were tested and the resulting residual contamination on the wafer surface was measured. The addition of small amounts of a chemical base such as ammonium hydroxide to the rinse water has been found to be effective in reducing the surface concentration of sulfur and also mitigates the particle growth that occurs on SPM cleaned wafers. The volume of room temperature water required to rinse these wafers is also significantly reduced.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 519142
• Report Number(s): SAND--97-1844C; CONF-970869--1; ON: DE97007889
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
AMMONIUM HYDROXIDES
HYDROGEN PEROXIDE
RESOURCE CONSERVATION
SEMICONDUCTOR DEVICES
SULFURIC ACID
SURFACE CLEANING
WATER