Sulfuric acid/hydrogen peroxide rinsing study
Conference
·
OSTI ID:135053
- and others
Sulfuric acid hydrogen peroxide mixtures (SPM) are commonly used in the semiconductor industry to remove organic contaminants from wafer surfaces. This viscous solution is very difficult to rinse off water surfaces. Various rinsing conditions were tested and the resulting residual acid left on the water surface was measured. Particle growth resulting from incomplete rinse is correlated with the amount of sulfur on the wafer surface measured by Time of Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). The amount of sulfur on the wafer structure after the rinse step is strongly affected by the wafer film type and contact angle prior to the SPM clean.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 135053
- Report Number(s):
- SAND--95-2589C; CONF-951007--8; ON: DE96002541
- Country of Publication:
- United States
- Language:
- English
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