Stoichiometric structures of defects in high-purity GaAs grown by the liquid encapsulated Czochralski method

Journal Article · Wed Jun 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340275· OSTI ID:5184995

Morrow, R A

We analyze some existing data obtained on a GaAs sample grown by the liquid encapsulated Czochralski (LEC) method from a near-stoichiometric melt after the sample was cycled through various thermal processes. By using the constraint of constant deviation from stoichiometry we are led to suggest that the defects observed or inferred to exist in the sample have the following properties: (1) the acceptor associated with the 1.45-eV photoluminescence signal has the stoichiometric structure of Ga/sub As/ if doubly charged or of V/sub Ga/Ga/sub As/ if singly charged; (2) the (presumed) donor at E/sub c/-0.134 eV has the stoichiometric structure of V/sub As/; (3) another (inferred) acceptor has the stoichiometric structure of V/sub Ga/; and (4) the very shallow donor at E/sub c/-0.003 eV is the precursor of EL2 and becomes EL2 upon reaction with V/sub Ga/ or its stoichiometric equivalent

• Research Organization: Department of Physics and Astronomy, University of Maine, Orono, Maine 04469
• OSTI ID: 5184995
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CZOCHRALSKI METHOD
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LUMINESCENCE
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
STOICHIOMETRY
SUBSTRATES
THERMAL CYCLING