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Deep acceptorlike recombination centers in bulk liquid encapsulated Czochralski GaP, studied with optically detected magnetic resonance

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.342490· OSTI ID:5254596
The optically detected magnetic resonance technique is applied to determine the nature of broad, featureless emission bands observed in the near-infrared region in bulk GaP crystals grown by the liquid encapsulated Czochralski method. A broad emission band with maximum at approx. =8000 A (approx. =1.55 eV) was consistently observed in undoped and donor-doped (S, Te, Se, Ge) crystals, and is shown to be due to donor-acceptor pair (DAP) recombination. The analysis of the optically detected magnetic resonance experiments indicates that shallow donors and deep acceptors are active in the 8000-A recombination. The identity of the approx. =0.7-eV deep acceptor center active in this DAP transition could not be determined from the experimental results, but a single acceptor complex consisting of a Ga vacancy and two adjacent donors is proposed as a tentative model.
Research Organization:
Department of Physics and Measurement Technology, Linkoeping University, S-581 83 Linkoeping, Sweden
OSTI ID:
5254596
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:1; ISSN JAPIA
Country of Publication:
United States
Language:
English