Photoluminescence measurements in Ge-doped p-type Ga/sub 0. 60/Al/sub 0. 40/As

Journal Article · Thu Jan 01 00:00:00 EST 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328465· OSTI ID:6645470

Swaminathan, V; Schumaker, N; Zilko, J; Wagner, W; Parsons, C

Results of photoluminescence and Hall effect measurements of p-type Ge-doped Ga/sub 0.60/Al/sub 0.40/As grown by liquid phase epitaxy are reported. The effective segregation coefficient for Ge for growth at 785 /sup 0/C is estimated to be approx.2 x 10/sup -3/. The photoluminescence spectra at 5.5 K are characterized by two edge emission bands at approx.1.91 and approx.1.88 eV and a broadband at approx.1.55 eV. The edge emission bands are identified to be donor-acceptor pair recombination bands involving the same donor but two different acceptors. The ionization energy of the donor is estimated to be 50--60 meV and the acceptor ionization energies are estimated to be approx.60 and approx.100 meV for the 1.91- and 1.88-eV bands, respectively. The deep acceptor is believed to involve a background impurity, most likely C or Si. It is suggested that the 1.55-eV band arises from a next-nearest neighbor complex consisting of Ge on an arsenic site and an As vacancy. Post-growth annealing treatment at 830 /sup 0/C is found to decrease the photoluminescence intensity suggesting the presence of annealing induced nonradiative centers.

• Research Organization: Bell Laboratories, Murray Hill New Jersey 07974
• OSTI ID: 6645470
• Journal Information: J. Appl. Phys.; (United States), Vol. 52:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
PHOTOLUMINESCENCE
GALLIUM ARSENIDES
CRYSTAL GROWTH
DATA
DOPED MATERIALS
EPITAXY
GERMANIUM
HALL EFFECT
IONIZATION POTENTIAL
LIQUIDS
P-TYPE CONDUCTORS
RECOMBINATION
SPECTRA
ULTRALOW TEMPERATURE
VERY HIGH TEMPERATURE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
FLUIDS
GALLIUM COMPOUNDS
INFORMATION
LUMINESCENCE
MATERIALS
METALS
PNICTIDES
SEMICONDUCTOR MATERIALS
360603* - Materials- Properties