Evidence of the role of boron in undoped GaAs grown by liquid encapsulated Czochralski
We provide experimental evidence of electrical activity correlated with residual boron impurities and native point defects in undoped liquid-encapsulated Czochralski GaAs crystals. In Ga-rich samples containing > or =10/sup 17/ cm/sup -3/ boron, an 0.073-eV acceptor level is observed in which the concentration increases with Ga and B content. An approximately quadratic increase in the concentration of the 0.073-eV defect acceptor is observed with increasing boron concentration, suggesting that a complex involving boron with an intrinsic defect (V/sub As/, Ga/sub i/, or Ga/sub As/ ) is responsible for the observed acceptor behavior. No evidence of electrically active boron or boron complexes was found in semi-insulating GaAs pulled from stoichiometric or As-rich melts.
- Research Organization:
- Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235
- OSTI ID:
- 7085901
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:11; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BORON ADDITIONS
BORON ALLOYS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
CZOCHRALSKI METHOD
DATA
DOPED MATERIALS
ELECTRICAL PROPERTIES
ENCAPSULATION
EXPERIMENTAL DATA
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
INFORMATION
LIQUIDS
MATERIALS
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
POINT DEFECTS
QUANTITY RATIO
STOICHIOMETRY