Mode-locked picosecond pulse generation from high power phase-locked GaAs laser arrays

Journal Article · Wed Feb 15 00:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94774· OSTI ID:5179680

van der Ziel, J P; Temkin, H; Dupuis, R D; Mikulyak, R M

A diffraction-coupled laser array has been actively mode locked in an external cavity to yield Gaussian pulses as short a 61-ps full width at half-maximum with a peak power of 1.1 W and an average power of 0.07 W. The array consists of 10 lasers, each 3 ..mu..m wide with 9-..mu..m center to center spacing. It emits with a stable double-lobed far-field pattern characteristic of the out-of-phase coupling between neighboring lasers. These arrays may be useful where high peak as well as high average optical powers are required.

• Research Organization: AT and T Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5179680
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 44:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
GALLIUM ARSENIDES
STIMULATED EMISSION
SEMICONDUCTOR LASERS
ELECTROMAGNETIC PULSES
MODE LOCKING
CAVITIES
COUPLING
DIFFRACTION
EXPERIMENTAL DATA
FEEDBACK
MHZ RANGE 100-1000
POWER
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DATA
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
FREQUENCY RANGE
GALLIUM COMPOUNDS
INFORMATION
LASERS
MHZ RANGE
NUMERICAL DATA
PNICTIDES
PULSES
RADIATIONS
SCATTERING
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)