High-power phase-locked arrays of index-guided diode lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
A nine-unit phase-locked array of index-guided channel-substrate-planar large-optical-cavity AlGaAs diode lasers is fabricated by one-step liquid phase epitaxial growth over a 5-..mu..m period sawtooth grating etched into a GaAs substrate. Two-lobed, 180/sup 0/ phase shift operation is achieved to 75-mW cw power and to 400-mW peak pulsed power. Strong coherent optical coupling between the array units provides single-longitudinal-mode array operation to 80-mW cw output power. The cw and pulsed threshold currents are in the 250--400-mA range. Single-lobe, 0/sup 0/ phase shift operation, with the single beam peaked at 0/sup 0/, is achieved to 200-mW peak power.
- Research Organization:
- RCA Laboratories, Princeton, New Jersey 08540
- OSTI ID:
- 6194676
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:12; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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