High-power picosecond pulse generation in GaAs multiquantum well phase-locked laser arrays using pulsed current injection

Journal Article · Thu Nov 01 00:00:00 EST 1984 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1984.1072300· OSTI ID:5874545

van der Ziel, J P; Dupuis, R D; Logan, R A; Temkin, H

Gaussian shaped picosecond pulses as short as 62 ps have been obtained from an array of 10 phase-coupled multiquantum well GaAs lasers. Combined dc and 75 ps long current pulses from a comb generator were used. Single pulses were obtained with an average power of 50 mW at a 960 MHz repetition rate which corresponds to a peak power of 0.8 W. These pulse widths are in good agreement with a theory of pulse formation based on the carrier and photon density equations with the gain expanded in a power series in time to yield Gaussian pulses.

• Research Organization: AT and T Bell Laboratories, Murray Hill, NJ 07974
• OSTI ID: 5874545
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-20:11
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
PULSE TECHNIQUES
DENSITY
DIRECT CURRENT
EQUATIONS
GAIN
GALLIUM ARSENIDES
GAUSSIAN PROCESSES
MHZ RANGE 100-1000
PHOTONS
POWER RANGE 10-100 MW
PULSES
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ELEMENTARY PARTICLES
FREQUENCY RANGE
GALLIUM COMPOUNDS
LASERS
MASSLESS PARTICLES
MHZ RANGE
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)