Investigation of the electrical degradation of silicon Schottky contacts due to mercury contamination

Journal Article · Sun Nov 26 23:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102052· OSTI ID:5176741

Jones, P L; Corbett, J W ^[1]

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1. Department of Physics, State University of New York at Albany, Albany, New York 12222 (US)

A micrographic investigation of the effect of mercury exposure on silicon substrates was conducted. Mercury was found to leave a residue on the silicon surface. A further study was conducted to determine the extent of electrical degradation of Si Schottky contacts due to the presence of a contaminant mercury residue between the metal and the semiconductor. It was concluded that such a layer caused uncertainties in subsequent resistivity measurements, higher capacitance-voltage ({ital C}-{ital V}) barrier heights, and observable leakage currents in current-voltage ({ital I}-{ital V}) plots taken from mercury-contaminated Si Schottky diodes.

• OSTI ID: 5176741
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:22; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CONTAMINATION
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
LEAKAGE CURRENT
MERCURY
METALS
PHYSICAL PROPERTIES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON