Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts
- Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)
We analyze the properties of Fe Schottky contacts prepared in situ on n-type GaN(0001) by molecular beam epitaxy. In particular, we investigate the suitability of these epitaxial Fe layers for electrical spin injection. Current-voltage-temperature measurements demonstrate pure field emission for Fe/GaN:Si Schottky diodes with [Si]=5 Multiplication-Sign 10{sup 18} cm{sup -3}. The Schottky barrier height of the clean, epitaxial Fe/GaN interface is determined by both current-voltage-temperature and capacitance-voltage techniques to be (1.47{+-}0.09)eV.
- OSTI ID:
- 22089280
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 101; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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