Profiling hydrogen in materials using ion beams

Conference · Fri Dec 31 23:00:00 EST 1976

OSTI ID:5168335

Ziegler, J F; Wu, C P; Williams, P

Over the last few years many ion beam techniques have been reported for the profiling of hydrogen in materials. Nine of these were evaluated using similar samples of hydrogen ion-implanted into silicon. When possible the samples were analyzed using two or more techniques to confirm the ion-implanted accuracy. The results of this analysis which has produced a consensus profile of H in silicon which is useful as a calibration standard are reported. The analytical techniques used have capabilities ranging from very high depth resolution (approximately 50 A) and high sensitivity (less than 1 ppM) to deep probes for hydrogen which can sample throughout thin sheets (up to 0.2 mm thick).

• Research Organization: IBM Research Div., Yorktown Heights, N.Y. (USA); RCA Labs., Princeton, N.J. (USA); Illinois Univ., Urbana (USA). Materials Research Lab.
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5168335
• Report Number(s): CONF-770642-13
• Country of Publication: United States
• Language: English

Related Subjects

640301* -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATOM COLLISIONS
CATIONS
CHARGED PARTICLES
CHEMICAL ANALYSIS
COLLISIONS
DEPTH DOSE DISTRIBUTIONS
ELEMENTS
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
ION COLLISIONS
ION IMPLANTATION
ION SCATTERING ANALYSIS
ION-ATOM COLLISIONS
IONS
NONDESTRUCTIVE ANALYSIS
RADIATION DOSE DISTRIBUTIONS
RANGE
SEMIMETALS
SILICON
SPATIAL DOSE DISTRIBUTIONS