High conversion efficiency and high radiation resistance InP homojunction solar cells

Journal Article · Thu Mar 15 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94851· OSTI ID:5162960

Yamamoto, A; Yamaguchi, M; Uemura, C

InP homojunction solar cells have been fabricated using thermal diffusion of sulphur or selenium into p-type InP substrates. A conversion efficiency of 16.5% (active area) was obtained for a S-diffused cell under simulated AM1.5 illumination. The InP solar cell was found for the first time to have a higher resistance to ..gamma..-ray radiation degradation than Si and GaAs solar cells with comparable junction depth. These results show a possibility of the InP solar cells for space applications.

• Research Organization: Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokai, Ibaraki 319-11, Japan
• OSTI ID: 5162960
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARRIER DENSITY
CONVERSION
DATA
DIFFUSION
DIRECT ENERGY CONVERSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTROMAGNETIC RADIATION
ELECTRON MOBILITY
ELEMENTS
ENERGY CONVERSION
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GAMMA RADIATION
HIGH TEMPERATURE
INDIUM PHOSPHIDE SOLAR CELLS
INFORMATION
IONIZING RADIATIONS
LOW TEMPERATURE
LUMINESCENCE
MEDIUM TEMPERATURE
MOBILITY
NONMETALS
NUMERICAL DATA
PARTICLE MOBILITY
PHOTOELECTRIC CELLS
PHOTOLUMINESCENCE
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC CONVERSION
RADIATION EFFECTS
RADIATIONS
SOLAR CELLS
SOLAR EQUIPMENT
SULFUR
USES