Injection semiconductor lasers: Physical fundamentals

Journal Article · Sat Mar 01 04:00:00 EST 1986 · J. Sov. Laser Res.; (United States)

OSTI ID:5157292

Yakubovich, S D; Rivlin, L A; Semenov, A T

The advantages of the injection semiconductor laser are listed and include such favorable properties as high efficiency of direct conversion of electric energy into coherent light, high gain, low inertia, appreciable negative-absorption bandwidth, miniature size, and others. This paper examines electrons and holes in a semiconductor and the radiative recombination of electrons and holes in the semiconductor. The author discusses recombination in transitions between parabolic bands with adherence to the quasi-momentum selection rules. A band-structure model for strongly doped gallium arsenide is presented and spontaneous emission of photons by strongly doped gallium arsenide is examined. The optical gain in strongly doped gallium arsenide (homolasers) is discussed. The author describes the amplification of light in heterostructure injection lasers and presents injection-laser balance equations based on a simple injection-laser model.

• OSTI ID: 5157292
• Journal Information: J. Sov. Laser Res.; (United States), Journal Name: J. Sov. Laser Res.; (United States) Vol. 7:2; ISSN JSLRD
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420500* -- Engineering-- Materials Testing
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
BEAM OPTICS
EFFICIENCY
ELECTRICAL PUMPING
ELECTRONS
ELEMENTARY PARTICLES
EMISSION
ENERGY EFFICIENCY
ENERGY GAP
ENERGY LEVELS
FERMIONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HOLES
JUNCTIONS
LASERS
LEPTONS
MATERIALS
MATHEMATICAL MODELS
PHOTON EMISSION
PNICTIDES
POPULATION INVERSION
PUMPING
RECOMBINATION
SELECTION RULES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS