Effects of 1-MeV neutron irradiation on the operation of a bistable optically controlled semiconductors with (BOSS)

Journal Article · Wed Jun 01 00:00:00 EDT 1994 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.293301· OSTI ID:7037368

Stoudt, D C; Roush, R A; Mazzola, M S ^[1]; Brinkmann, R P ^[2]; Zutavern, F J; Loubriel, G M ^[3]

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1. Naval Surface Warfare Center, Dahlgren, VA (United States). Pulsed Power Systems and Technology Group
2. Siemens AG, Muenich (Germany)
3. Sandia National Labs., Albuquerque, NM (United States)

Recent subnanosecond-opening results of the bistable optically controlled semiconductor switch (BOSS) are presented. The processes of persistent photoconductivity followed by photo-quenching have been demonstrated in copper-compensated, silicon-doped, semi-insulating gallium arsenide (GaAs:Si:Cu). These processes allow a switch to be developed that can be closed by the application of one laser pulse ([lambda] = 1.06 [mu]m) and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. The opening phase is a two-step process which relies initially on the absorption of the 2--13-[mu]m laser and finally on the recombination of electrons in the conduction band with holes in the valance band. The second step requires a sufficient concentration of recombination centers in the material for opening to occur in the subnanosecond regime. This report discusses the effects of 1-MeV neutron irradiation on the BOSS material for the purpose of recombination center generation. Initial experiments indicated a reduction of the recombination time from several nanoseconds down to about 250 ps. Both experimental and theoretical results are presented.

• OSTI ID: 7037368
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYONS
DATA
ELECTRICAL EQUIPMENT
ELECTRO-OPTICAL EFFECTS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
EQUIPMENT
EXPERIMENTAL DATA
FERMIONS
HADRONS
INFORMATION
LASER RADIATION
NEUTRONS
NUCLEONS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES
THEORETICAL DATA