Excitation and Fe concentration dependences in the impulse photoconductance of InP:Fe

Journal Article · Thu Mar 15 00:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94855· OSTI ID:5152920

Hammond, R B; Paulter, N G; Wagner, R S; Springer, T E

We report impulse response measurements on InP:Fe photoconductors excited by laser and electron beam radiation. Measurements are reported on crystals with Fe concentrations from 2 x 10/sup 15/ cm/sup -3/ to 4 x 10/sup 16/ cm/sup -3/ and with excited electron-hole-pair densities of approx.10/sup 12/ cm/sup -3/ and 9 x 10/sup 17/ cm/sup -3/. Measured signal decays are purely exponential in character, and decay times are inversely related to Fe concentration. No long-lived tails are observed. Decay times show no dependence on excitation level for excited carrier concentrations that are well above and well below the Fe concentrations. The magnitude of the photoresponse indicates that electrons and not holes are the primary current carriers. The data suggest that for impulse excitation photoconductance decay in InP:Fe is due to trap-assisted recombination of electrons and holes at the Fe sites, with a rate determined by the species with the slower capture rate.

• Research Organization: Electronics Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
• OSTI ID: 5152920
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 44:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON BEAMS
COLLISIONS
INDIUM PHOSPHIDES
CHARGE CARRIERS
ELECTRON COLLISIONS
IMPURITIES
PHOTOCONDUCTIVITY
PHOTON COLLISIONS
CARRIER DENSITY
CRYSTAL DOPING
EXCITATION
HOLES
IRON IONS
RECOMBINATION
RESPONSE FUNCTIONS
TRAPPING
TRAPS
BEAMS
CHARGED PARTICLES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY-LEVEL TRANSITIONS
FUNCTIONS
INDIUM COMPOUNDS
IONS
LEPTON BEAMS
PARTICLE BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
360603* - Materials- Properties