Transient photoconductive response of InP:Fe

Journal Article · Wed Dec 31 23:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.338862· OSTI ID:6972820

Iverson, A E; Smith, D L; Paulter, N G; Hammond, R B

We present experimental transient response data for iron-doped indium phosphide (InP:Fe) photoconductors subject to impulse and rectangular-pulse excitation over a wide range of excitation intensities. The detector response shape is observed to depend strongly on the excitation intensity. We present a model for bulk-material response based on the dynamics of electron and hole trapping and recombination on the deep-level iron impurities. The model qualitatively reproduces the observed experimental behavior.

• Research Organization: Los Alamos National Laboratory, Los Alamos, New Mexico 87545 and Program in Applied Mathematics, University of Arizona, Tucson, Arizona 85721
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 6972820
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FUNCTIONS
HOLES
IMPURITIES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MATHEMATICAL MODELS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTIVITY
PHOTOCONDUCTORS
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
RESPONSE FUNCTIONS
TRAPPING