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Title: Transient photoconductive response of InP:Fe

Abstract

We present experimental transient response data for iron-doped indium phosphide (InP:Fe) photoconductors subject to impulse and rectangular-pulse excitation over a wide range of excitation intensities. The detector response shape is observed to depend strongly on the excitation intensity. We present a model for bulk-material response based on the dynamics of electron and hole trapping and recombination on the deep-level iron impurities. The model qualitatively reproduces the observed experimental behavior.

Authors:
; ; ;
Publication Date:
Research Org.:
Los Alamos National Laboratory, Los Alamos, New Mexico 87545 and Program in Applied Mathematics, University of Arizona, Tucson, Arizona 85721
OSTI Identifier:
6972820
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 61:1
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM PHOSPHIDES; PHOTOCONDUCTIVITY; PHOTOCONDUCTORS; RESPONSE FUNCTIONS; HOLES; IMPURITIES; MATHEMATICAL MODELS; RECOMBINATION; TRAPPING; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FUNCTIONS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; 360603* - Materials- Properties

Citation Formats

Iverson, A E, Smith, D L, Paulter, N G, and Hammond, R B. Transient photoconductive response of InP:Fe. United States: N. p., 1987. Web. doi:10.1063/1.338862.
Iverson, A E, Smith, D L, Paulter, N G, & Hammond, R B. Transient photoconductive response of InP:Fe. United States. https://doi.org/10.1063/1.338862
Iverson, A E, Smith, D L, Paulter, N G, and Hammond, R B. Thu . "Transient photoconductive response of InP:Fe". United States. https://doi.org/10.1063/1.338862.
@article{osti_6972820,
title = {Transient photoconductive response of InP:Fe},
author = {Iverson, A E and Smith, D L and Paulter, N G and Hammond, R B},
abstractNote = {We present experimental transient response data for iron-doped indium phosphide (InP:Fe) photoconductors subject to impulse and rectangular-pulse excitation over a wide range of excitation intensities. The detector response shape is observed to depend strongly on the excitation intensity. We present a model for bulk-material response based on the dynamics of electron and hole trapping and recombination on the deep-level iron impurities. The model qualitatively reproduces the observed experimental behavior.},
doi = {10.1063/1.338862},
url = {https://www.osti.gov/biblio/6972820}, journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 61:1,
place = {United States},
year = {1987},
month = {1}
}