Excitation and Fe concentration dependences in the impulse photoconductance of InP:Fe
We report impulse response measurements on InP:Fe photoconductors excited by laser and electron beam radiation. Measurements are reported on crystals with Fe concentrations from 2 x 10/sup 15/ cm/sup -3/ to 4 x 10/sup 16/ cm/sup -3/ and with excited electron-hole-pair densities of approx.10/sup 12/ cm/sup -3/ and 9 x 10/sup 17/ cm/sup -3/. Measured signal decays are purely exponential in character, and decay times are inversely related to Fe concentration. No long-lived tails are observed. Decay times show no dependence on excitation level for excited carrier concentrations that are well above and well below the Fe concentrations. The magnitude of the photoresponse indicates that electrons and not holes are the primary current carriers. The data suggest that for impulse excitation photoconductance decay in InP:Fe is due to trap-assisted recombination of electrons and holes at the Fe sites, with a rate determined by the species with the slower capture rate.
- Research Organization:
- Electronics Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
- OSTI ID:
- 5152920
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:6; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
BEAMS
CARRIER DENSITY
CHARGE CARRIERS
CHARGED PARTICLES
COLLISIONS
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ELECTRON COLLISIONS
ENERGY-LEVEL TRANSITIONS
EXCITATION
FUNCTIONS
HOLES
IMPURITIES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IONS
IRON IONS
LEPTON BEAMS
PARTICLE BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTIVITY
PHOTON COLLISIONS
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
RESPONSE FUNCTIONS
TRAPPING
TRAPS