Impulse photoconductance of thin-film polycrystalline silicon
Using optoelectronic correlation and sampling oscilloscope techniques we measured impulse photoconductance of polycrystalline-Si thin-film photoconductors excited by femtosecond dye-laser pulses. We studied as-deposited micrograin films as well as annealed, H-passivated, and H-passivated/annealed films. Results yielded photoexcited carrier mobilities of 6.8 and 104 cm/sup 2//V s, respectively in as-deposited and 1150 /sup 0/C-annealed films. The photoconductance decays of as-deposited films showed an initial fast decay time of approx.22 ps followed by a primary decay time of approx.150 ps. Photoconductance decays of annealed films showed similar primary decay times but no initial fast decay transient. H passivation of both as-deposited and annealed films produced no changes in carrier mobilities. However, H passivation of as-deposited films eliminated the initial fast decay transient and increased the primary decay time to approx.800 ps. H passivation of annealed films increased decay time only slightly. Results suggest that grain boundaries control decays in as-deposited films but not in annealed films, and that H passivation does not reduce carrier scattering.
- Research Organization:
- Electronics Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
- OSTI ID:
- 6066699
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:9; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
AMPLIFICATION
ANNEALING
CARRIER MOBILITY
CRYSTAL STRUCTURE
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
GAIN
GRAIN BOUNDARIES
HEAT TREATMENTS
ION IMPLANTATION
MICROSTRUCTURE
MOBILITY
PASSIVATION
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
SCATTERING
SEMIMETALS
SILICON
THICKNESS
THIN FILMS
VERY HIGH TEMPERATURE