Detection of hydrogen-plasma-induced defects in Si by positron annihilation

Journal Article · Mon Mar 28 04:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111831· OSTI ID:5149784

Asoka-Kumar, P ^[1]; Stein, H J ^[2]; Lynn, K G ^[1]

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1. Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We report a positron annihilation study of defects created in Si by rf hydrogen-plasma exposure at 275 [degree]C. Analysis of positron annihilation spectroscopy data indicates voidlike structures in a defective layer extending to [approx]14 nm from the surface at a concentration of 1.9[plus minus]0.5[times]10[sup 20] cm[sup [minus]3]. The Doppler broadening parameter for the annihilation gamma rays is strongly correlated to the hydrogen coverage of the void surfaces, voids remain in the Si to at least 800 [degree]C while the hydrogen is desorbed from their surfaces between 600 and 800 [degree]C.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5149784
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:13; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
BASIC INTERACTIONS
CHEMICAL REACTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DETECTION
DOPPLER BROADENING
ELECTROMAGNETIC INTERACTIONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HYDROGENATION
INTERACTIONS
LEPTONS
LINE BROADENING
MATTER
PARTICLE INTERACTIONS
PLASMA
POSITRONS
SEMIMETALS
SILICON
VOIDS