Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams

Journal Article · Tue Oct 07 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4896829· OSTI ID:22305769

Uedono, Akira; Yoshihara, Nakaaki ^[1]; Mizushima, Yoriko ^[2]; Kim, Youngsuk ^[3]; Nakamura, Tomoji ^[2]; Ohba, Takayuki ^[3]; Oshima, Nagayasu; Suzuki, Ryoichi ^[4]

---

1. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
2. Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan)
3. ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan)
4. Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

Vacancy-type defects introduced by the grinding of Czochralski-grown Si wafers were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons showed that vacancy-type defects were introduced in the surface region (<98 nm), and the major defect species were identified as (i) relatively small vacancies incorporated in dislocations and (ii) large vacancy clusters. Annealing experiments showed that the defect concentration decreased with increasing annealing temperature in the range between 100 and 500°C. After 600–700°C annealing, the defect-rich region expanded up to about 170 nm, which was attributed to rearrangements of dislocation networks, and a resultant emission of point defects toward the inside of the sample. Above 800°C, the stability limit of those vacancies was reached and they started to disappear. After the vacancies were annealed out (900°C), oxygen-related defects were the major point defects and they were located at <25 nm.

• OSTI ID: 22305769
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 13 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANNIHILATION
CRYSTAL DEFECTS
CZOCHRALSKI METHOD
DISLOCATIONS
DOPPLER BROADENING
EMISSION
GRINDING
LIFETIME
OXYGEN
POSITRON BEAMS
POSITRONS
SILICON
SPECTRA
STABILITY
SURFACES
VACANCIES