Vacancy-type defects in In{sub x}Ga{sub 1−x}N grown on GaN templates probed using monoenergetic positron beams

Journal Article · Thu Nov 14 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4830033· OSTI ID:22259295

Uedono, Akira ^[1]; Watanabe, Tomohito; Kimura, Shogo; Zhang, Yang; Lozac'h, Mickael ^[2]; Sang, Liwen; Sumiya, Masatomo ^[3]; Ishibashi, Shoji ^[4]; Oshima, Nagayasu; Suzuki, Ryoichi ^[5]

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1. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
2. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
3. Wide Bandgap Material Group, National Institute for Materials Science, Tsukuba 305-0044 (Japan)
4. Nanosystem Research Institute (NRI) “RICS,” National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)
5. Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

Native defects in In{sub x}Ga{sub 1−x}N layers grown by metalorganic chemical vapor deposition were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons for a 200-nm-thick In{sub 0.13}Ga{sub 0.87}N layer showed that vacancy-type defects were introduced by InN alloying, and the major species of such defects was identified as complexes between a cation vacancy and nitrogen vacancies. The presence of the defects correlated with lattice relaxation of the In{sub 0.13}Ga{sub 0.87}N layer and the increase in photon emissions from donor-acceptor-pair recombination. The species of native defects in In{sub 0.06}Ga{sub 0.94}N layers was the same but its concentration was decreased by decreasing the InN composition. With the layer thickness increased from 120 nm to 360 nm, a defect-rich region was introduced in the subsurface region (<160 nm), which can be associated with layer growth with the relaxation of compressive stress.

• OSTI ID: 22259295
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 18 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
ANNIHILATION
ARSENIC COMPLEXES
CATIONS
CHEMICAL VAPOR DEPOSITION
DEFECTS
DOPPLER BROADENING
ECOLOGICAL CONCENTRATION
GALLIUM NITRIDES
HOTELS
INDIUM NITRIDES
LIFETIME
NITROGEN
PHOTON EMISSION
POSITRON BEAMS
POSITRONS
RECOMBINATION
RELAXATION
SPECTRA
VACANCIES