Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 3, 1 April-30 June 1980

Technical Report · Fri Aug 01 04:00:00 EDT 1980

OSTI ID:5141461

Liaw, M; Secco D'Aragona, F

The objective of this program is to identify and develop low cost processing for fabricating large grain size polycrystalline silicon substrates. Metallurgical grade silicon (MG-Si) is chosen as the starting material for sequential purification and crystal growth. Several purification techniques have been studied. They include (1) acid leaching with HCl, (2) physical separation of insoluble impurities, (3) reactive gas treatment of molten silicon, and (4) slagging using a mixed-oxide slag. In this quarterly period purification by vacuum treatment and by impurity redistribution using ingot pulling has been studied. Procedures and results are reported.

• Research Organization: Motorola, Inc., Phoenix, AZ (USA). Semiconductor Group
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 5141461
• Report Number(s): DOE/SERI-8229-3/2-T6
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
EVAPORATION
FABRICATION
GRAIN SIZE
IMPURITIES
MELTING
MICROSTRUCTURE
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POLYCRYSTALS
PRODUCTION
PURIFICATION
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SIZE
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
ZONE MELTING