Sequential Purification and Crystal Growth for the Production of Low Cost Silicon Substrates: Quarterly Technical Progress Report No. 3, April 1 - June 30, 1980
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
The objective of this program is to identify and develop low cost processing for fabricating large grain size polycrystalline silicon substrates. Metallurgical grade silicon (MG-Si) is chosen as the starting material for sequential purification and crystal growth. As shown in the previous two technical reports, several purification techniques have been studied. They include (l) acid leaching with HCl, (2) physical separation of insoluble impurities, (3) reactive gas treatment of molten silicon, and (4) slagging using a mixed-oxide slag. In this quarterly period purification by vacuum treatment and by impurity redistribution using ingot pulling has been studied.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- DOE Contract Number:
- AC36-08GO28308;
- OSTI ID:
- 1114064
- Report Number(s):
- DOE/SERI--8119-3/2-T6
- Country of Publication:
- United States
- Language:
- English
Similar Records
Sequential Purification and Crystal Growth for the Production of Low Cost Silicon Substrates
Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 3, 1 April-30 June 1980
Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 2, 1 January 1980-31 March 1980
Technical Report
·
Fri Aug 01 00:00:00 EDT 1980
·
OSTI ID:12229465
Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 3, 1 April-30 June 1980
Technical Report
·
Fri Aug 01 00:00:00 EDT 1980
·
OSTI ID:5141461
Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 2, 1 January 1980-31 March 1980
Technical Report
·
Thu May 01 00:00:00 EDT 1980
·
OSTI ID:5277024