Sequential Purification and Crystal Growth for the Production of Low Cost Silicon Substrates
The objective of this program is to identify and develop low cost precessing for fabricating large grain size polycrystalline silicon substrates. Metallurgical grade silicon (MG-Si) is chosen as the starting material for sequential purification and crystal growth. Several purification techniques have been studied. They include (1) acid leaching with HCl, (2) physical separation of insoluble impurities, (3) reactive gas treatment of molten silicon, and (4) slagging using a mixed-oxide slag. In this quarterly period purification by vaccum treatment and by impurity redistribution using ingot pulling has been studied. Procedures and results are reported.
- Research Organization:
- Motorola, Inc. Semiconductor Group, Phoenix, AZ
- Sponsoring Organization:
- USDOE, Office of Solar Energy
- DOE Contract Number:
- AC02-77CH00178
- OSTI ID:
- 12229465
- Report Number(s):
- DOE/SERI--8119-3/2-T6
- Country of Publication:
- United States
- Language:
- English
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Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 3, 1 April-30 June 1980
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