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U.S. Department of Energy
Office of Scientific and Technical Information

Sequential Purification and Crystal Growth for the Production of Low Cost Silicon Substrates

Technical Report ·
DOI:https://doi.org/10.2172/12229465· OSTI ID:12229465
The objective of this program is to identify and develop low cost precessing for fabricating large grain size polycrystalline silicon substrates. Metallurgical grade silicon (MG-Si) is chosen as the starting material for sequential purification and crystal growth. Several purification techniques have been studied. They include (1) acid leaching with HCl, (2) physical separation of insoluble impurities, (3) reactive gas treatment of molten silicon, and (4) slagging using a mixed-oxide slag. In this quarterly period purification by vaccum treatment and by impurity redistribution using ingot pulling has been studied. Procedures and results are reported.
Research Organization:
Motorola, Inc. Semiconductor Group, Phoenix, AZ
Sponsoring Organization:
USDOE, Office of Solar Energy
DOE Contract Number:
AC02-77CH00178
OSTI ID:
12229465
Report Number(s):
DOE/SERI--8119-3/2-T6
Country of Publication:
United States
Language:
English