Observations of anisotropic diffused layer sheet resistance in EFG silicon ribbon solar cells

Journal Article · Sat Apr 15 00:00:00 EST 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90102· OSTI ID:5132254

Serreze, H B; Ravi, K V; Hari Rao, C V

Anisotropic electrical conductivity has been observed in the near-space-charge region of phosphorus-diffused EFG silicon ribbon solar cells during the course of junction profiling studies using Van der Pauw sheet-resistance measurement techniques. This anisotropy is believed due to either preferential diffusion of phosphorus down linear defect boundaries which are present in EFG silicon or to dislocation pile-up along these boundaries.

• Research Organization: Mobil Tyco Solar Energy Corporation, 16 Hickory Drive, Waltham, Massachusetts 02154
• OSTI ID: 5132254
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 32:8
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SOLAR CELLS
ELECTRIC CONDUCTIVITY
ANISOTROPY
CRYSTAL DEFECTS
DIFFUSION
DISLOCATIONS
DOPED MATERIALS
EFFICIENCY
FABRICATION
GRAIN BOUNDARIES
PHOSPHORUS IONS
SILICON
SPACE CHARGE
ATOMIC IONS
CHARGED PARTICLES
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELEMENTS
IONS
LINE DEFECTS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
140501* - Solar Energy Conversion- Photovoltaic Conversion