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A CMOS signal conditioning ASIC for large silicon pixels

Conference ·
OSTI ID:513033
;  [1]; ;  [2];
  1. IntraSpec, Inc., Oak Ridge, TN (United States)
  2. Oak Ridge National Lab., TN (United States)
We designed, constructed, and tested a CMOS ASIC consisting of a preamplifier, shaping amplifier, and externally adjustable discriminator. This device was designed for detectors with reasonably fast rise times (compared to 1 {mu}s) and capacitances in the range of 5 to 100 pF. The design was implemented with both PMOS and NMOS inputs. The NMOS version has a superior noise slope of 7 rms e/pF and an average noise at 6 pF input load of less than 375 rms electrons. The charge conversion sensitivity is 2.4 V/pC and the power drain is less than 10 mW/channel.
OSTI ID:
513033
Report Number(s):
CONF-961123--
Country of Publication:
United States
Language:
English

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