Surprising patterns of CMOS susceptibility to ESD and implications on long-term reliability

Conference · Tue Jan 01 04:00:00 EST 1980

OSTI ID:5129080

Schwank, J. R.; Baker, R. P.; Armendariz, M. G.

CMOS electrostatic discharge (ESD) failures in a product where, by design, the device input terminals are not accessible to ESD led to this study of device susceptibility and an analysis of the long-term reliability of devices in assemblies from that production line. Some surprising patterns of device susceptibility are established and it is shown that the probability of long-term failure in devices whose electrical characteristics have been degraded by electrostatic discharge is small.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5129080
• Report Number(s): SAND-80-0957C; CONF-800962-1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEFENSE
450100 -- Military Technology
Weaponry
& National Defense-- Chemical Explosions & Explosives
CHEMICAL EXPLOSIVES
DETONATORS
ELECTRIC DISCHARGES
ELECTRONIC CIRCUITS
ELECTROSTATICS
EXPLOSIVES
FAILURES
MOS TRANSISTORS
PRINTED CIRCUITS
RELIABILITY
SEMICONDUCTOR DEVICES
TRANSISTORS