Excess currents in high efficiency Si solar cells

Conference · Tue May 01 04:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5123275

Rao, B B; Anderson, W A; Banerjee, S; Han, M K

Silicon N/P junction solar cells have now reached efficiency levels which range from 17% to 19%. Some are the violet-type cell having textured surface, multiple A/R coatings, or back surface fields. Some have surface passivation in the form of an oxide between grid lines to improve ultraviolet response. Others are of the MINP variety in which a 20 - 25 A oxide grown over the entire ion implanted N-region reduces surface recombination. The top metal grid (M) is composed of a low work function metal rather than the typical Ti/Pd/Ag contact. This paper compares excess current mechanisms for the MINP cell and the passivated violet-type cell (N/P-P). These currents must be identified since they limit solar cell efficiency.

• Research Organization: Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, New York
• OSTI ID: 5123275
• Report Number(s): CONF-840561-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
COMPARATIVE EVALUATIONS
CURRENTS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CURRENTS
EQUIPMENT
JUNCTIONS
P-N JUNCTIONS
PERFORMANCE
PERFORMANCE TESTING
PHOTOCURRENTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TESTING