Material state of ion-implanted Cr in GaAs

Journal Article · Sun Aug 01 04:00:00 EDT 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331444· OSTI ID:5117348

Pronko, P P; Rai, A K; Holland, O W; Appleton, B R; Narayan, J

Chromium-implanted GaAs has been studied using 120 keV implants to fluence levels from 1 x 10/sup 14/ to 5 x 10/sup 16/ cm/sup -2/. The postannealed materials state has been examined using Rutherford backscattering spectrometry, proton-induced x-ray excitation, channeling, and transmission electron microscopy. Annealing was performed in flowing H/sub 2/ at 900 C for 15 min under 85-nm thick Si/sub 3/N/sub 4/ dielectric caps. Various stages of precipitation were observed having structure and composition that depended on total implanted fluence. For the highest fluence, coarse nonuniform second-phase precipitates were present with dimensions on the order of 50 to 100 nm. At lower fluences small defect cluster precipitates, with average diameters of 6 nm, were identified through black-white contrast analysis. The relative fraction of precipitated Cr was 40% at 1 x 10/sup 15/ cm/sup -2/ and decreased to 9% at 5 x 10/sup 14/ cm/sup -2/. The volume concentration of implanted Cr that is retained in solid solution after annealing is estimated at 2 x 10/sup 18/ cm/sup -3/. Channeling analysis suggests that these atoms are retained in nonunique interstitial or other nonsubstitutional positions.

• Research Organization: Universal Energy Systems, Incorporated, 3195 Plainfield Road, Dayton, Ohio 45432
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5117348
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BACKSCATTERING
CHANNELING
CHARGED PARTICLES
CHEMICAL ANALYSIS
CHROMIUM IONS
DATA
DIMENSIONS
DISPERSIONS
ELECTRON MICROSCOPY
ENERGY RANGE
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INFORMATION
ION IMPLANTATION
IONS
KEV RANGE
MATHEMATICAL MODELS
MICROSCOPY
MIXTURES
NITRIDES
NITROGEN COMPOUNDS
NONDESTRUCTIVE ANALYSIS
NUMERICAL DATA
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
QUANTITY RATIO
SCATTERING
SILICON COMPOUNDS
SILICON NITRIDES
SOLID SOLUTIONS
SOLUTIONS
SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE
X-RAY EMISSION ANALYSIS