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Lattice modification in ion-implanted ceramics

Journal Article · · J. Am. Ceram. Soc.; (United States)
The effect of ion implantation on alumina (Al/sub 2/O/sub 3/) and silicon carbide (SiC) was investigated by Rutherford backscattering (RBS), indentation hardness, fracture toughness, transmission electron microscopy (TEM), and linear scratching with a diamond stylus. The implanted (10/sup 16/ to 10/sup 17/ Cr X cm/sup -2/ at 280 to 300 keV, 1 to 4 X 10/sup 16/ Ti X cm/sup -2/ at 150 keV, 2 X 10/sup 16/ Zr X cm/sup -2/ at 150 keV) Al/sub 2/O/sub 3/ lattice is significantly damaged but remains crystalline; the lattice hardness increases, and the scratched surface is less sensitive to fracture. The implanted (10/sup 13/ to 10/sup 16/ N X cm/sup -2/ at 62 keV, 10/sup 14/ to 10/sup 16/ Cr X cm/sup -2/ at 280 keV) SiC lattice becomes amorphous to a depth of 250 nm, becomes less hard, and deforms without fracture when scratched. The variation in Rutherford backscattered spectra and in surface hardness with annealing are reported and interpreted in terms of lattice defects for the Al/sub 2/O/sub 3/ specimens.
Research Organization:
Oak Ridge National Laboratory, Oak Ridge, TN
OSTI ID:
6466658
Journal Information:
J. Am. Ceram. Soc.; (United States), Journal Name: J. Am. Ceram. Soc.; (United States) Vol. 67:2; ISSN JACTA
Country of Publication:
United States
Language:
English