Positron annihilation in electron-irradiated n-type InP

Journal Article · Mon Feb 01 04:00:00 EST 1982 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:5067582

Brudnyi, V N; Vorob'ev, S A; Tsoi, A A

A study was made of the positron annihilation and electrical properties of n-type InP crystals (n/sub 0/roughly-equal2 x 10/sup 17/ cm/sup -3/) irradiated at 300 /sup 0/K with approx.2 MeV electrons in doses up to approx.1 x 10/sup 19/ cm/sup -2/. Narrowing of the correlation curves of the annihilation radiation and an increase in the intensity of the narrow component were the effects of electron irradiation. The electrical properties of n-type InP were determined after large electron doses: R/sub Htslim/roughly-equal2 x 10/sup 6/ cm/sup 3//C and R/sub H/sigmaroughly-equal300--400 cm/sup 2/ x V/sup -1/ x sec/sup -1/ at 300 /sup 0/K. Annealing of radiation defects was observed in the temperature range 300--700 /sup 0/K.

• Research Organization: S. M. Kirov Polytechnic Institute, Tomsk
• OSTI ID: 5067582
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 16:2; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
BASIC INTERACTIONS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC INTERACTIONS
ELECTRONS
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERACTIONS
LEPTONS
MATERIALS
MEDIUM TEMPERATURE
MEV RANGE
MEV RANGE 01-10
N-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
POSITRONS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS