Ethyldimethylindium for the growth of InGaAs-GaAs strained-layer lasers by metalorganic chemical vapor deposition

Journal Article · Mon Dec 11 00:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102003· OSTI ID:5056639

York, P K; Beernink, K J; Kim, J; Coleman, J J; Fernandez, G E; Wayman, C M ^[1]

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1. Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1406 West Green Street, Urbana, Illinois 61801 (US)

The growth and characterization of strained In{sub 0.25}Ga{sub 0.75}As-GaAs-Al{sub 0.20}Ga{sub 0.80}As quantum well lasers grown by metalorganic chemical vapor deposition using ethyldimethylindium (EDMIn) are described. A vapor pressure of 0.56 Torr at 11 {degree}C has been extracted from the growth rates of thin InGaAs layers by transmission electron microscopy. Data on reproducibility in quantum well size are presented which indicate long-term stability in the EDMIn vapor pressure. Laser performance in samples grown with EDMIn is equivalent to, and in some cases better than, those grown with trimethylindium.

• OSTI ID: 5056639
• Journal Information: Applied Physics Letters; (USA), Vol. 55:24; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
INDIUM ARSENIDES
SEMICONDUCTOR LASERS
PERFORMANCE
EXPERIMENTAL DATA
MEDIUM TEMPERATURE
ORGANOMETALLIC COMPOUNDS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR DEPOSITED COATINGS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
COATINGS
DATA
DEPOSITION
ELECTRON MICROSCOPY
FILMS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
LASERS
MICROSCOPY
NUMERICAL DATA
ORGANIC COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SURFACE COATING
426002* - Engineering- Lasers & Masers- (1990-)
360601 - Other Materials- Preparation & Manufacture